Product Summary

The SPD02N60S5 is a Cool MOS Power Transistor.

Parametrics

Absolute maximum ratings: (1)Continuous drain current TC = 25 ℃: 1.8 A, TC = 100 ℃: 1.1 A; (2)Pulsed drain current, tp limited by Tjmax: 3.2 A; (3)Avalanche energy, single pulse ID = 1.35 A, VDD = 50 V: 50 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID = 1.8 A, VDD = 50 V: 0.07 mJ; (5)Avalanche current, repetitive tAR limited by Tjmax: 1.8 A; (6)Gate source voltage: ±20 V; (7)Gate source voltage AC (f >1Hz): ±30 V; (8)Power dissipation, TC = 25℃: 25 W; (9)Operating and storage temperature: -55 to +150 ℃.

Features

Features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SPD02N60S5
SPD02N60S5

Infineon Technologies

MOSFET COOL MOS N-CH 600V 1.8A

Data Sheet

0-1: $0.56
1-10: $0.50
10-100: $0.49
100-500: $0.46
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SPD005G
SPD005G

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Infineon Technologies

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Data Sheet

0-1: $0.68
1-10: $0.54
10-100: $0.46
100-500: $0.39
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Data Sheet

0-1: $0.64
1-10: $0.57
10-100: $0.45
100-500: $0.42
SPD02N60
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Data Sheet

Negotiable 
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Data Sheet

0-1550: $0.29
1550-2000: $0.24
2000-2500: $0.24
2500-5000: $0.23